US Patent Issued to Micron Technology on March 18 for "In-line programming adjustment of a memory cell in a memory sub-system" (California Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,927, issued on March 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"In-line programming adjustment of a memory cell in a memory sub-system" was invented by Sheyang Ning (San Jose, Calif.), Lawrence Celso Miranda (San Jose, Calif.), Zhengyi Zhang (San Jose, Calif.) and Tomoko Ogura Iwasaki (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a programming pulse of a set of programming pulses to be applied to a wordline associated with a memory cell of a memory device, where the memory cell is to be programmed to a target voltage level representing a first programming level. At a first ...