US Patent Issued to Micron Technology on March 18 for "Apparatus and method including memory device having 2-transistor vertical memory cell" (Idaho Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,541, issued on March 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatus and method including memory device having 2-transistor vertical memory cell" was invented by Durai Vishak Nirmal Ramaswamy (Boise, Idaho) and Kamal M. Karda (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell including a first transistor, a second transistor, and a dielectric structure formed in a trench. The first transistor includes a first channel region, and a charge storage structure separated from the first channel region. ...