US Patent Issued to Micron Technology on March 11 for "Methods of forming charge-blocking material, and integrated assemblies having charge-blocking material" (Singaporean Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,818, issued on March 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of forming charge-blocking material, and integrated assemblies having charge-blocking material" was invented by Pei Qiong Cheung (Singapore), Zhixin Xu (Singapore) and Yuan Fang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first ch...