US Patent Issued to Micron Technology on March 11 for "Faster multi-cell read operation using reverse read calibrations" (California Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,381, issued on March 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Faster multi-cell read operation using reverse read calibrations" was invented by Go Shikata (San Jose, Calif.) and Kitae Park (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device having a memory array with a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines and control logic coupled with the memory array. The control logic perform operations including: determining a metadata value characterizing a first read level voltage of a highest threshold voltage distribution of a subset of the plu...