ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,620, issued on June 3, was assigned to Micron Technology Inc. (Boise, Idaho).
"Techniques for memory zone size adjustment" was invented by Yanhua Bi (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for techniques for memory zone size adjustment are described. A memory system may dynamically update the size of a stale zone configured to store data written during a write burst or write booster mode. The stale zone may be part of a first block of memory cells, and may retain data during a transfer operation, such as flush operation. The size of the stale zone may be updated in response to the memory system receiving...