ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,608, issued on June 3, was assigned to Micron Technology Inc. (Boise, Idaho).
"Read cache memory" was invented by Eugene Feng (San Jose, Calif.) and Mathew Arcoleo (Campbell, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure includes methods and apparatuses for read cache memory. One apparatus includes a read cache memory apparatus comprising a first DRAM array, a first and a second NAND array, and a controller configured to manage movement of data between the DRAM array and the first NAND array, and between the first NAND array and the second NAND array."
The patent was filed on Aug. 6, 2020, under Application No. 16/987,...