US Patent Issued to Micron Technology on June 3 for "Programming operation of memory device being switched from high-density mode to high speed mode and/or lower power mode" (Italian Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,440, issued on June 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Programming operation of memory device being switched from high-density mode to high speed mode and/or lower power mode" was invented by Violante Moschiano (Avezzano, Italy) and Andrea Smaniotto (Albignasego, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and methods for operating the same are described. The memory devices may include non-volatile memory having a plurality of memory cells, and a controller. The controller may be configured to begin a first programming operation configured to program a first one of the plurality of memory cells with mor...