US Patent Issued to Micron Technology on June 3 for "Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors" (Idaho Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,143, issued on June 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors" was invented by Sanh D. Tang (Meridian, Idaho), Ke-Hung Chen (Boise, Idaho), Christopher W. Petz (Boise, Idaho), Pankaj Sharma (Boise, Idaho) and Yong Mo Yang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include an integrated assembly having capacitor-contact-regions. Metal-containing interconnects are coupled with the capacitor-contact-regions. A first insulative material is between the metal-containing interconnects. A se...