US Patent Issued to Micron Technology on June 3 for "Memory programming using consecutive coarse-fine programming operations of threshold voltage distributions" (American, Japanese, Italian Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,450, issued on June 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory programming using consecutive coarse-fine programming operations of threshold voltage distributions" was invented by Huai-Yuan Tseng (San Ramon, Calif.), Giovanni Maria Paolucci (Milan), Kishore Kumar Muchherla (Fremont, Calif.), James Fitzpatrick (Laguna Niguel, Calif.) and Akira Goda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes causing a first set of memory cells, associated with a first wordline of a memory array, to be programmed with a first set of threshold voltage distributions; causing a second set of memory cells, associated with ...