US Patent Issued to Micron Technology on June 24 for "Source bias temperature compensation for read and program verify operations on a memory device" (Japanese, American Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,850, issued on June 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Source bias temperature compensation for read and program verify operations on a memory device" was invented by Ronit Roneel Prakash (Hiratsuka, Japan) and Ching-Huang Lu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device receives a request to perform a memory access operation on a memory array of the memory device and determines an operating temperature of the memory device. The control logic further modifies a default magnitude of a source voltage signal based on the operating temperature to a form a modified source voltage...