US Patent Issued to Micron Technology on June 24 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,540, issued on June 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Yiping Wang (Boise, Idaho), Adam W. Saxler (Boise, Idaho) and Narula Bilik (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend t...