US Patent Issued to Micron Technology on June 24 for "Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitride" (Idaho Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,542, issued on June 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitride" was invented by Daniel Billingsley (Meridian, Idaho), Jordan D. Greenlee (Boise, Idaho), John D. Hopkins (Meridian, Idaho), Yongjun Jeff Hu (Boise, Idaho) and Swapnil Lengade (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lo...