US Patent Issued to Micron Technology on June 24 for "Array of memory cells, methods used in forming an array of memory cells, methods used in forming an array of vertical transistors, and methods used in forming an array of capacitors" (Italian Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,533, issued on June 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Array of memory cells, methods used in forming an array of memory cells, methods used in forming an array of vertical transistors, and methods used in forming an array of capacitors" was invented by Antonino Rigano (Cernusco sul Naviglio, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming an array of memory cells comprises forming a vertical stack comprising transistor material directly above and directly against a first capacitor electrode material. A mask is used to subtractively etch both the transistor material and thereafter the first capa...