ALEXANDRIA, Va., June 19 -- United States Patent no. 12,333,154, issued on June 17, was assigned to Micron Technology Inc. (Boise, Idaho).
"Reducing bit error rate in memory devices" was invented by Tingjun Xie (Milpitas, Calif.), Yang Liu (San Jose, Calif.), Jiangli Zhu (San Jose, Calif.), Juane Li (Milpitas, Calif.) and Aaron Lee (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A processing device in a memory sub-system performs a first media scan operation with respect to a plurality of memory pages addressable by the ordinary wordline, wherein each page of the plurality of memory pages is contained by a respective management unit, and responsive to determining that a value of a data stat...