US Patent Issued to Micron Technology on June 17 for "Memory device assembly with non-impinged leaker devices" (Idaho Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,185, issued on June 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device assembly with non-impinged leaker devices" was invented by Beth R. Cook (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a cell plate, a top electrode, and an insulator that separates the top electrode from bottom electrodes. The integrated assembly may include a first group of bottom electrodes that are coupled to the cell plate via a corresponding first group of leaker devices, where...