US Patent Issued to Micron Technology on June 17 for "High speed dual-tail latch with power gating" (Idaho Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,921, issued on June 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"High speed dual-tail latch with power gating" was invented by Jinha Hwang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first sensing stage configured to sense a voltage differential of a data signal and a reference signal and output a first amplified voltage differential, wherein the first amplified voltage differential includes a first voltage at a first output node and a second voltage at a second output node. The semiconductor device further includes a second sensing stage configured to sense the first amplified voltag...