US Patent Issued to Micron Technology on June 10 for "Techniques to mitigate memory die misalignment" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,607, issued on June 10, was assigned to Micron Technology Inc. (Boise, Idaho).

"Techniques to mitigate memory die misalignment" was invented by Jie Yang (Shanghai), Xu Zhang (Shanghai) and Bin Zhao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for mitigating memory die misalignment are described. A memory system may receive a command to write data to a memory device including a memory die. The memory system may determine whether the data indicated by the command (e.g., a first set of data) satisfies a threshold size. If the first set of data satisfies the threshold size, the memory system may determine whethe...