ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,707, issued on July 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Word line structures for three-dimensional memory arrays" was invented by Stephen W. Russell (Boise, Idaho), Lorenzo Fratin (Buccinasco, Italy), Enrico Varesi (Milan) and Paolo Fantini (Vimercate, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for word line structures for three-dimensional memory arrays are described. A memory device may include word line structures that support accessing memory cells arranged in a three-dimensional level architecture. The word line structures may be arranged above a substrate and be separated from each ...