ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,912, issued on July 8, was assigned to Micron Technology Inc. (Boise, Idaho).
"Plasma-doped trenches for memory" was invented by Yiping Wang (Boise, Idaho) and Wesley O. Mckinsey (Nampa, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for plasma-doped trenches for memory are described. A method for forming a memory device with plasma-doped trenches may include forming a stack of materials having alternating layers of polysilicon and oxide materials. A trench may be etched in the stack and doped using a plasma doping process. In some examples, the trench may be doped by applying Boron fluoride, diborane, methane, or ...