US Patent Issued to Micron Technology on July 8 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,658, issued on July 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Jordan D. Greenlee (Boise, Idaho), Rajasekhar Venigalla (Boise, Idaho) and Tom George (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers directly above a conductor tier that comprises silicon-containing material. The stack comprises laterally-spaced memory-bloc...