US Patent Issued to Micron Technology on July 29 for "Varying-polarity read operations for polarity-written memory cells" (American, Italian Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,393, issued on July 29, was assigned to Micron Technology Inc. (Boise, Idaho).

"Varying-polarity read operations for polarity-written memory cells" was invented by Innocenzo Tortorelli (Cernusco Sul Naviglio, Italy), Hari Giduturi (Folsom, Calif.) and Fabio Pellizzer (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for varying-polarity read operations for polarity-written memory cells are described. Memory cells may be programmed to store different logic values based on applying write voltages of different polarities to the memory cells. A memory device may read the logic values based on applying read voltag...