US Patent Issued to Micron Technology on July 29 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,620, issued on July 29, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Jivaan Kishore Jhothiraman (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region compris...