US Patent Issued to Micron Technology on July 29 for "Light emitting diodes with n-polarity and associated methods of manufacturing" (Idaho Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,425, issued on July 29, was assigned to Micron Technology Inc. (Boise, Idaho).

"Light emitting diodes with n-polarity and associated methods of manufacturing" was invented by Zaiyuan Ren (Boise, Idaho) and Thomas Gehrke (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Light emitting diodes ("LEDs") with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the...