US Patent Issued to Micron Technology on July 29 for "Dynamic read retry voltage sequences in a memory subsystem" (California Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,373,116, issued on July 29, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dynamic read retry voltage sequences in a memory subsystem" was invented by Yu-Chung Lien (San Jose, Calif.), Zhenming Zhou (San Jose, Calif.) and Tomer Tzvi Eliash (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and apparatuses include determining to apply a read retry operation to a portion of memory. The likelihood of a read retry timeout meeting a threshold is determined. A reverse trim setting is selected in response to determining the likelihood of the read retry timeout meets the threshold. The read retry operation is executed u...