US Patent Issued to Micron Technology on July 22 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,321, issued on July 22, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by John D. Hopkins (Meridian, Idaho) and Alyssa N. Scarbrough (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The stair-step region comprises a flight of stairs extending along a first direction. The first tiers are conductive and the second tiers are insulative at least in a finished-...