US Patent Issued to Micron Technology on July 22 for "Automated error correction with memory refresh" (Idaho Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,975, issued on July 22, was assigned to Micron Technology Inc (Boise, Idaho).

"Automated error correction with memory refresh" was invented by Hyun Yoo Lee (Boise, Idaho) and Kang-Yong Kim (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described apparatuses and methods provide automated error correction with memory refresh. Memory devices can include error correction code (ECC) technology to detect or correct one or more bit-errors in data. Dynamic random-access memory (DRAM), including low-power double data rate (LPPDR) synchronous DRAM (SDRAM), performs refresh operations to maintain data stored in a memory array. A refresh operation...