US Patent Issued to Micron Technology on July 15 for "Transistor configurations for vertical memory arrays" (Italian Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,688, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Transistor configurations for vertical memory arrays" was invented by Ferdinando Bedeschi (Biassono, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for transistor configurations for vertical memory arrays are described. A memory device may implement a multi-transistor architecture, such as a two-transistor architecture, that is operable to couple pillars with bit lines. For example, a memory device may include a conductive pillar that extends through levels of a memory array. The pillar may be coupled with a first bit line via a first ...