US Patent Issued to Micron Technology on July 15 for "Memory device having shared read/write data line for 2-transistor vertical memory cell" (Idaho Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,977, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having shared read/write data line for 2-transistor vertical memory cell" was invented by Kamal M. Karda (Boise, Idaho), Haitao Liu (Boise, Idaho), Karthik Sarpatwari (Boise, Idaho) and Durai Vishak Nirmal Ramaswamy (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line, a second data line, a conductive line, and a memory cell coupled to the first and second data lines. The memory cell includes a first transistor and a second ...