US Patent Issued to Micron Technology on July 15 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,888, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Guangjun Yang (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Conductive vias are formed that are individually directly electrically coupled to the another source/drain region. Conductor materi...