US Patent Issued to Micron Technology on July 15 for "Indicating a status of a memory built-in self-test for multiple memory device ranks" (Idaho Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,031, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Indicating a status of a memory built-in self-test for multiple memory device ranks" was invented by Scott E. Schaefer (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to indicating a status of the memory built-in self-test for multiple memory device ranks. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify a first data mask inversion (DMI) bit of the memory device that is associated with a first ...