US Patent Issued to Micron Technology on July 15 for "Gate oxide formation for fin field-effect transistor" (Idaho Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,934, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Gate oxide formation for fin field-effect transistor" was invented by Bingwu Liu (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include devices implementing one or more fin field-effect transistors (FinFETs) with gate oxide thickness that address thicker gate oxide quality with minimum material loss in the fins of the FinFETs for high voltage devices. The gate oxides can be fabricated with thicker oxides than gate oxides of FinFETs used with capacitors in memory cells of memory arrays. These gate oxides can be formed as oxid...