US Patent Issued to Micron Technology on July 15 for "Error correction memory device with fast data access" (Idaho Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,848, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Error correction memory device with fast data access" was invented by Scott E. Schaefer (Boise, Idaho) and Aaron P. Boehm (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a memory device with an error correction memory device with fast data access are described. For example, during a read operation, a memory device may be configured to output the data indicated by the read operation concurrent with performing an error correction operation. If the memory device detects an error, the memory device may indicate the error to a ho...