ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,371, issued on July 1, was assigned to Micron Technology Inc. (Boise, Idaho).
"Vertical memory architecture" was invented by Agostino Pirovano (Milan) and Fabio Pellizzer (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a vertical memory architecture are described. A memory device may include memory cells arranged in a three-dimensional vertical memory architecture. Each memory cell may include a storage element (e.g., a chalcogenide material), where a logic state may be programmed at the storage element based on a polarity of an applied voltage that exceeds a threshold voltage. The storage element may be...