ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,737, issued on July 1, was assigned to Micron Technology Inc. (Boise, Idaho).
"Semiconductor device with a porous air vent" was invented by Jong Sik Paek (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "This document discloses techniques, apparatuses, and systems for a semiconductor device with a porous air vent. The semiconductor device includes a semiconductor die mounted to a substrate at one or more contact pads. Underfill material is disposed between the semiconductor die and the substrate. The substrate includes a porous portion composed of a porous material. The porous material is such that air, but not the underfill material, ...