US Patent Issued to Micron Technology on July 1 for "Memory device having 2-transistor vertical memory cell and shared channel region" (Idaho Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,335, issued on July 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having 2-transistor vertical memory cell and shared channel region" was invented by Karthik Sarpatwari (Boise, Idaho), Kamal M. Karda (Boise, Idaho), Durai Vishak Nirmal Ramaswamy (Boise, Idaho) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line located in a first level of the apparatus; a second data line located in a second level of the apparatus; a first memory cell located in a third level of the apparatus...