US Patent Issued to Micron Technology on July 1 for "Divider and contact formation for memory cells" (Idaho Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,346, issued on July 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Divider and contact formation for memory cells" was invented by Shuangqiang Luo (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operatio...