US Patent Issued to Micron Technology on Jan. 28 for "Threshold voltage bin calibration at memory device power up" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,759, issued on Jan. 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Threshold voltage bin calibration at memory device power up" was invented by Steven Michael Kientz (Westminster, Colo.) and Chia-Yu Kuo (Hukou Town, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example method of threshold voltage offset calibration at memory device power up comprises: identifying a set of memory pages that have been programmed within a time window; determining, for each voltage offset bin of a plurality of voltage offset bins, a corresponding value of a data state metric produced by a memory access operation with respect to a memory page of t...