US Patent Issued to Micron Technology on Jan. 28 for "Techniques to manufacture ferroelectric memory devices" (Italian Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,538, issued on Jan. 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Techniques to manufacture ferroelectric memory devices" was invented by Giorgio Servalli (Fara Gera d'Adda, Italy), Marcello Mariani (Milan) and Agostino Pirovano (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for techniques to manufacture ferroelectric memory devices are described. In some cases, a memory array may be manufactured using a self-aligned manufacturing technique. For example, a continuous layer of dielectric material may be formed over an assembly which includes an array of transistors coupling contacts on the surface of...