US Patent Issued to Micron Technology on Jan. 28 for "Methods used in forming a memory array comprising strings of memory cells including forming a pair of elevationally-extending walls that are laterally-spaced relative one another and that are individually horizontally-longitudinally-elongated" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,746, issued on Jan. 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming a memory array comprising strings of memory cells including forming a pair of elevationally-extending walls that are laterally-spaced relative one another and that are individually horizontally-longitudinally-elongated" was invented by Anilkumar Chandolu (Boise, Idaho) and Indra V. Chary (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are fo...