US Patent Issued to Micron Technology on Jan. 28 for "Memory arrays and methods used in forming a memory array comprising strings of memory cells" (American, Italian Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,317, issued on Jan. 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays and methods used in forming a memory array comprising strings of memory cells" was invented by Lifang Xu (Boise, Idaho), Indra V. Chary (Boise, Idaho), Justin B. Dorhout (Boise, Idaho), Jian Li (Boise, Idaho), Haitao Liu (Boise, Idaho) and Paolo Tessariol (Arcore, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells ...