ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,560, issued on Jan. 28, was assigned to Micron Technology Inc. (Boise, Idaho).
"Fast two-sided corrective read operation in a memory device" was invented by Tomoharu Tanaka (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells associated with wordlines and control logic. The control logic performs operations that cause a corrective read operation to be performed at a selected memory cell. The operations include: causing a first voltage to be applied to a first wordline associated with the selected memory cell; causing a second voltage, having a lower magnitude than the first voltage, to be ...