US Patent Issued to Micron Technology on Jan. 27 for "Programming delay scheme for in a memory sub-system based on memory reliability" (California Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,060, issued on Jan. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Programming delay scheme for in a memory sub-system based on memory reliability" was invented by Yu-Chung Lien (San Jose, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system includes a memory device and a processing device operatively coupled to the memory device. The processing device is to receive a programming command with respect to a set of memory cells. The processing device is further to determine a value of a metric reflecting reliability of a subset of the set of memory cells. The processing device is further to de...