US Patent Issued to Micron Technology on Jan. 27 for "Microelectronic devices including stack structures having strengthened intermediate regions of associated insulative structures, and related systems" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,482, issued on Jan. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices including stack structures having strengthened intermediate regions of associated insulative structures, and related systems" was invented by Nancy M. Lomeli (Boise, Idaho), Jiewei Chen (Meridian, Idaho) and Naiming Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a stack structure including insulative structures and conductive structures vertically alternating with the insulative structures. At least one of the insulative structures includes interfacial regions proximate interfaces between the at ...