US Patent Issued to Micron Technology on Jan. 27 for "Lateral etch stops for access line formation in a memory die" (American, Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,491, issued on Jan. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Lateral etch stops for access line formation in a memory die" was invented by Raja Kumar Varma Manthena (Boise, Idaho) and Yoshiaki Fukuzumi (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for lateral etch stops for access line formation in a memory die are described. A memory die may be formed with isolation regions that provide an etch stop to limit the extent of voids formed by removing a sacrificial material between layers of a dielectric region. For example, first trenches may be formed through a stack of alternating lay...