US Patent Issued to Micron Technology on Jan. 13 for "Vertical digit lines with alternating epitaxial silicon for horizontal access devices in 3D memory" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,976, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Vertical digit lines with alternating epitaxial silicon for horizontal access devices in 3D memory" was invented by Scott E. Sills (Boise, Idaho), Si-Woo Lee (Boise, Idaho), David K. Hwang (Boise, Idaho), Yoshitaka Nakamura (Boise, Idaho), Yuanzhi Ma (Boise, Idaho) and Glen H. Walters (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nodes. The horizontally oriented access devices having a first source/drain region...