ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,282, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).
"Reducing charge migration in a memory system" was invented by Amiya Banerjee (Karnataka, India), Kranthi Kumar Vaidyula (Karnataka, India) and Jameer Mulani (Karnataka, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for reducing charge migration in a memory system are described. The memory system may receive a command to program a first set of memory cells with first data. The memory system may generate a scrambling seed to scramble the first data. Before programming the scrambled data, the memory system may compare a first set of stat...