US Patent Issued to Micron Technology on Jan. 13 for "Nano through substrate vias for semiconductor devices and related systems and methods" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,509, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Nano through substrate vias for semiconductor devices and related systems and methods" was invented by Kunal R. Parekh (Boise, Idaho) and Angela S. Parekh (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices having nano through substrate vias (TSVs), and related systems and methods, are disclosed herein. In some embodiments, the semiconductor device includes a semiconductor substrate that has a first surface and a second surface opposite the first surface. A trench is formed in the first surface and filled with a dielectric material and a TS...