US Patent Issued to Micron Technology on Jan. 13 for "Multiple, alternating epitaxial silicon for horizontal access devices in vertical three dimensional (3D) memory" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,974, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Multiple, alternating epitaxial silicon for horizontal access devices in vertical three dimensional (3D) memory" was invented by David K. Hwang (Boise, Idaho), John F. Kaeding (Boise, Idaho), Matthew S. Thorum (Boise, Idaho), Yuanzhi Ma (Boise, Idaho), Scott E. Sills (Boise, Idaho), Si-Woo Lee (Boise, Idaho), Yoshitaka Nakamura (Boise, Idaho) and Glen H. Walters (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nod...