US Patent Issued to Micron Technology on Jan. 13 for "Microelectronic devices, memory devices, and electronic systems, and methods of forming the same" (Italian, Swiss Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,989, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices, memory devices, and electronic systems, and methods of forming the same" was invented by Umberto Maria Meotto (Dietlikon, Switzerland), Anna Maria Conti (Milan) and Paolo Tessariol (Arcore, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a stack structure including tiers each including insulative material and conductive material vertically adjacent the insulative material. The stack structure divided into at least two blocks separated from one another. The microelectronic device further includes at least one...