US Patent Issued to Micron Technology on Jan. 13 for "Methods of forming a device, and related devices, memory devices, and electronic systems" (Idaho Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,000, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of forming a device, and related devices, memory devices, and electronic systems" was invented by Durai Vishak Nirmal Ramaswamy (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a device comprises forming sacrificial pillar structures over conductive structures overlying a barrier structure substantially impermeable to hydrogen. The sacrificial pillar structures are separated from one another by trenches linearly extending in a first lateral direction orthogonal to a second lateral direction in which the conductive structures linear...